| PART |
Description |
Maker |
| M48T37YMH M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70 |
TRANS PREBIASED DUAL NPN SOT363
TRANS PREBIASED DUAL COMP SOT363
TRANS PREBIAS DUAL COMP SOT-563
TRANS PREBIASED DUAL PNP SOT-363
DIODE ZENER SINGLE 150mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL
3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER SINGLE 300mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-23 3K/REEL 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER DUAL ISOLATED 200mW 3.3Vz 5mA-Izt 0.0606 5uA-Ir 1 SOT-363 3K/REEL 3.3 - 5V56千位32KB的SRAM x8计时
|
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| DDTA143FCA-7 DDTA113ZCA-7 |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PLASTIC PACKAGE-3
TRANS PREBIASED PNP 200MW SOT-23 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes, Inc.
|
| V23870-A1131-B600 V23870-A3132-K600 V23870-A1131-A |
Components and FTTx solutions - 1310 nm Tx / 1550 nm Rx; pigtail
Components and FTTx solutions - 1310 nm Tx / 1550 nm Rx, ext. Temp. Range; pigtail
Bi-Directional Pigtail SFF Transceiver 155 Mbit/s/ 1310 nm Tx / 1550 nm Rx
TRANS PREBIASED NPN 200MW SOT23
TRANS PREBIASED NPN 200MW SOT323
Metalized Polyester Film Radial Lead Capacitor; Capacitance: .22uF; Voltage: 630V; Case Size: 18.5x14.8 mm; Packaging: Bulk
Bi-Directional Pigtail SFF Transceiver 155 Mbit/s, 1310 nm Tx / 1550 nm Rx 双向收发器尾纤准系统155兆比秒，1310纳米发射/接收1550纳米
TRANS PREBIASED NPN 150MW SOT523 双向收发器尾纤准系统155兆比秒，1310纳米发射/接收1550纳米
TRANS PREBIASED NPN SOT323 双向收发器尾纤准系统155兆比秒，1310纳米发射/接收1550纳米
DIODE ZENER SINGLE 500mW 9.7Vz 20mA-Izt 0.0254 0.1uA-Ir 8 SOD-123 3K/REEL 双向收发器尾纤准系统155兆比秒，1310纳米发射/接收1550纳米
|
INFINEON[Infineon Technologies AG]
http://
Infineon Technologies A...
|
| 2DA1774Q-7 2DA1774R-7 2DA1774Q-13 |
TRANS BIPOLAR -50V PNP SOT-523 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes, Inc.
DIODES INC
|
| G8338-02 G7871 G7871-02 G8795-02 G8338 G8341 G8341 |
TRANS PREBIASED PNP 150MW SOT523
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 200V; Case Size: 25x25 mm; Packaging: Bulk
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| DDTB113ZC-7-F DDTB114GC-7-F DDTB114EC-7-F DDTB113E |
PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Prebiased Transistors
|
Diodes, Inc.
|
| M38023E7 M38022E3 M38021E2 M38025M2 M38025M1 M3802 |
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
1-Ch. 10-Bit 1.25 MSPS ADC 8-Ch., DSP/SPI, Hardware Configurable, Low Power 24-SOIC -40 to 85
TRANS PREBIASED NPN 200MW SOT-23
Screwless Socket Brdg.(50 pk)
8-BIT SINGLE-CHIP MICROCOMPUTER
R1 单芯位CMOS微机
Single Output LDO, 500mA, Fixed(2.5V), Tight Output Accuracy of 2%, Thermal Overload Protection 20-TSSOP 0 to 125 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
Single Chip 8-Bit CMOS Microcomputer
Single Chip 8-bit Microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Sem...
http://
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| DDTD122LC DDTD122TC DDTD142JC DDTD142TC |
Prebiased Transistors
NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| DDTC122TE DDTC142JE DDTC142JE-7 DDTC122LE DDTC122L |
Prebiased Transistors
NPN PRE-BIASED 100 mA SOT-523 SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| DDTD113EU DDTD113EU-7 DDTD143EU DDTD143EU-7 DDTD12 |
Prebiased Transistors
NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| K4H560438D-NC/LA0 K4H560838D-NC/LA0 K4H560438D-NC/ |
256Mb sTSOPII 256Mb的sTSOPII
DIODE ZENER SINGLE 300mW 10Vz 20mA-Izt 0.02513 0.1uA-Ir 8 SOT-23 3K/REEL
DIODE ZENER SINGLE 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOD-323 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 9.95Vz 20mA-Izt 0.02513 0.1uA-Ir 8 SOT-363 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
